2N3053 Ver la hoja de datos (PDF) - TT Electronics.
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2N3053 Datasheet PDF : 3 Pages
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MEDIUM POWER SILICON
NPN TRANSISTOR
2N3053
• Low Leakage Current,
High Transition Frequency (FT) = 100MHz Typ.
• Hermetic TO-39 Metal Package.
• Ideally Suited For Medium Current Switching And
Amplifier Applications.
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
60V
VCEO
Collector – Emitter Voltage
40V
VCER
Collector – Emitter Voltage RBE = 10Ω
50V
VCEX
Collector – Emitter Voltage VBE = -1.5V
60V
VEBO
Emitter – Base Voltage
5V
IC
Continuous Collector Current
0.7A
PD
Total Power Dissipation at TA = 25°C
1.0W
Derate Above 25°C
5.71mW/°C
PD
Total Power Dissipation at TC = 25°C
5W
Derate Above 25°C
28.6mW/°C
TJ
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJA
Thermal Resistance, Junction To Ambient
RθJC
Thermal Resistance, Junction To Case
Max.
175
35
Units
°C/W
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 3065
Website: http://www.semelab-tt.com
Issue 2
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