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AO4423

30V P-Channel MOSFET

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AO4423

30V P-Channel MOSFET

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol

Parameter

Conditions

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

IDSS

Zero Gate Voltage Drain Current

IGSS

VGS(th)

ID(ON)

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

ID=-250µA, VGS=0V

VDS=-30V, VGS=0V

VDS=0V, VGS=±20V

VDS=0V, VGS=±25V

VDS=VGS ID=-250µA

VGS=-10V, VDS=-5V

VGS=-20V, ID=-15A

TJ=55°C

RDS(ON)

gFS

VSD

IS

Static Drain-Source On-Resistance

VGS=-10V, ID=-15A

VGS=-6V, ID=-10A

Forward Transconductance

VDS=-5V, ID=-15A

Diode Forward Voltage

IS=-1A,VGS=0V

Maximum Body-Diode Continuous Current

TJ=125°C

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=-15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

SWITCHING PARAMETERS

Qg

Qgs

Qgd

tD(on)

tr

tD(off)

tf

trr

Qrr

Total Gate Charge

Gate Source Charge

VGS=-10V, VDS=-15V, ID=-15A

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

VGS=-10V, VDS=-15V, RL=1.0Ω,

RGEN=3Ω

Turn-Off Fall Time

Body Diode Reverse Recovery Time IF=-15A, dI/dt=100A/µs

Body Diode Reverse Recovery Charge IF=-15A, dI/dt=100A/µs

Min

-30

-1.5

-182

2.1

Typ

-2.1

5.1

7.4

5.9

7.5

48

-0.71

2527

583

397

4.3

47

8

14

12

8

54

87

26.1

12.3

Max Units

V

-1

µA

-5

±1

µA

±10 µA

-2.6 V

A

6.2

mΩ

9

7.2 mΩ

9.5 mΩ

S

-1

V

-4.2 A

3033 pF

pF

556 pF

6.4

Ω

57 nC

nC

nC

ns

ns

ns

ns

32

ns

nC

A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with

T A=25°C. The value in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA

curve provides a single pulse rating.

F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

Note *: This device is guaranteed RG 100% tested after date code 8V11 (Jan 1st 2008)

Rev10: May. 2012

2/4

www.freescale.net.cn

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