SS13B Ver la hoja de datos (PDF) - Diode Semiconductor Korea

Número de pieza

componentes Descripción

fabricante

SS13B

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

Diode Semiconductor Korea 

Diode Semiconductor Korea

SS12B- - -SS110B

FIG.1 -- FORWARD DERATING CURVE

1.0

Resistive or

inductive Load

0.5

0

50

P.C.B.MOUNTED ON

0.2X0.2(5.0X5.0mm)

COPPERPAD AREAS

60 70 80 90 100 110 120 130 140 150 160 170

LEAD TEMPERATURE

FIG.2-- PEAK FORWARD SURGE CURRENT

40

20

0

1

T L = 1 0 0 OC

8 .3 m s S in gle H alf S in e -W a v e

(J E D E C M e th o d )

10

100

NUMBER OF CYCLES AT 60Hz

FIG.3 -- TYPICAL FORWARD CHARACTERISTICS

50

SS12B-SS14B

10

SS18B-SS110B

1

0 .1

Pulse Width=300 S

1%DUTY CYCLE

SS15B-SS16B

0 .0 1

0

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

INSTANTANEOUS FORWARD VOLTAGE,VOLTS

FIG.4 -- TYPICAL REVERSE CHARACTERISTICS

100

10

SS15B-SS110B

TJ=125℃

SS12B-SS14B

1

SS18B-SS110B

0.1

TJ=25℃

0.01

SS12B-SS16B

0.001

0

20 40 6 0 8 0 1 00

PERCENT OF RATED PEAK REVERSE VOLTAGE,

www.diode.kr

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