SI9424BDY Ver la hoja de datos (PDF) - Vishay Semiconductors
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SI9424BDY Datasheet PDF : 6 Pages
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P-Channel 20-V (D-S) MOSFET
Si9424BDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 20
0.025 at VGS = - 4.5 V
0.033 at VGS = - 2.5 V
ID (A)
- 7.1
- 6.1
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information: Si9424BDY-T1-E3 (Lead (Pb)-free)
Si9424BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
- 20
V
VGS
±9
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Current
TA = 25 °C
TA = 70 °C
ID
- 7.1
- 5.6
- 5.6
- 4.5
A
IDM
- 30
Continuous Source Current (Diode Conduction)a
IS
- 1.7
- 1.0
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
2.0
1.25
1.3
0.8
W
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t ≤ 10 s
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
50
80
30
Maximum
62.5
100
40
Unit
°C/W
Document Number: 72015
S09-0870-Rev. C, 18-May-09
www.vishay.com
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