2SC4746 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
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fabricante
2SC4746 Datasheet PDF : 2 Pages
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Jaiis
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
ioaucti, Una.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC4746
DESCRIPTION
• High Breakdown Voltage-
: VCBO= 1500V (Min)
• High Switching Speed
APPLICATIONS
• Designed for character display horizontal deflection
output stage applications
f
1Z
PIN 1.BASE
I. COLLECTOR
3. BETTER
^ TO-3PML package
1 -» c •*-
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
6
V
Ic
Collector Current- Continuous
8
A
lc(surge) Collector Current-Surge
Collector Power Dissipation
PC
@ TC=25'C
Tj
Junction Temperature
Tstg
Storage Temperature Range
20
A
50
W
150
'C
-55-150 •c
*Q
I
A
1
I
H
Kt
t
U
I
—^• Y •*-.
Z
•1
G
-N-T- °
mm
DIM WIN
A 19.90
B 15.90
C 5.50
D 0.90
F 3.30
6 2.90
H 5.90
J 0.595
K 22.30
I 1.90
N 10.80
0 4.90
R 3.75
S 3.20
U 9.90
V 4.70
2 | 1.90
MAX
20.10
16.10
5.70
1.10
3.50
3.10
6.10
0.605
22.50
2.10
11.00
5.10
3.95
3.40
10.10
4.90
2.10
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensionswithout
notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
10 press. I lowever. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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