2SB806-R-HF Ver la hoja de datos (PDF) - KEXIN Industrial

Número de pieza

componentes Descripción

fabricante

2SB806-R-HF

PNP Transistors

KEXIN Industrial 

SSMMDDTTyyppee

PNP Transistors

2SB806-HF

Transistors

■ FCelastusrifeicsation of hfe(1)

● High collector to emitter voltage: VCEO = -120V.

● Pb−Free Package May be Available. The G−Suffix Denotes a

Pb−Free Lead Finish

1.70 0.1

0.42 0.1

0.46 0.1

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector current (pulse) *1

Collector power dissipation

Junction temperature

Storage temperature

*1. PW≤10ms,duty cycle≤50%

■ Electrical Characteristics Ta = 25℃

Symbol

VCBO

VCEO

VEBO

IC

IC(pu)

Pc

Tj

Tstg

Rating

-120

-120

-5

-0.7

-1.2

2

150

-55 to +150

Parameter

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

Collector-emitter saturation voltage *

Base - emitter saturation voltage *

Base - emitter voltage *

DC current gain *

Collector output capacitance

Transition frequency

Symbol

Test Conditions

VCBO Ic= -100 μA， IE= 0

VCEO Ic=- 1 mA， IB= 0

VEBO IE= -100μA， IC= 0

ICBO VCB= -120 V , IE= 0

IEBO VEB= -5V , IC=0

VCE(sat) IC=-500 mA, IB=-50mA

VBE(sat) IC=-500 mA, IB=-50mA

VBE VCE= -10V, IC= -10mA

VCE= -1V, IC= -100mA

hFE

VCE= -1V, IC= -5mA

Cob VCB= -10V, IE=0,f=1MHz

fT

VCE= -10V, IC= -10mA

* PW≤350µs,duty cycle≤2%

■ EhlFeEctCriclaaslsCifhicaartaiocnte(1ri)stics Ta

Type

2SB806-R-HF 2S=B82056℃-Q-HF

Range

90-180

135-270

Marking

KR F

KQ F

2SB806-P-HF

200-400

KP F

1.Base

2.Collector

3.Emitter

Unit

V

V

V

A

A

W

℃

℃

Min Typ Max Unit

-120

-120

V

-5

-0.1

uA

-0.1

-0.6

-1.5 V

-0.55

-0.68

90 200 400

45 200

14

pF

75

MHz

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