PEMD10 Ver la hoja de datos (PDF) - NXP Semiconductors.

Número de pieza

componentes Descripción

fabricante

PEMD10

NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ

NXP Semiconductors. 

NXP Semiconductors

3

Cc

(pF)

2

1

PEMD10; PUMD10

NPN/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k

006aac813

103

fT

(MHz)

102

006aac757

0

0

10

20

30

40

50

VCB (V)

10

10-1

1

10

102

IC (mA)

Fig 8.

f = 1 MHz; Tamb = 25 C

TR1 (NPN): Collector capacitance as a function

of collector-base voltage; typical values

Fig 9.

VCE = 5 V; Tamb = 25 C

TR1 (NPN): Transition frequency as a function

of collector current; typical values of built-in

transistor

103

hFE

102

006aac814

(1)

(2)

(3)

-1

VCEsat

(V)

006aac815

-10-1

(1)

10

(2)

(3)

1

-10-1

-1

-10

-102

IC (mA)

VCE = 5 V

(1) Tamb = 100 C

(2) Tamb = 25 C

(3) Tamb = 40 C

Fig 10. TR2 (PNP): DC current gain as a function of

collector current; typical values

-10-2

-10-1

-1

-10

-102

IC (mA)

IC/IB = 20

(1) Tamb = 100 C

(2) Tamb = 25 C

(3) Tamb = 40 C

Fig 11. TR2 (PNP): Collector-emitter saturation

voltage as a function of collector current;

typical values

PEMD10_PUMD10

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 6 — 4 January 2012

© NXP B.V. 2012. All rights reserved.

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