PUMD10,125 Ver la hoja de datos (PDF) - NXP Semiconductors.

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fabricante

PUMD10,125

NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ

NXP Semiconductors. 

NXP Semiconductors

PEMD10; PUMD10

NPN/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k

10. Packing information

Table 9. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.[1]

Type number Package Description

Packing quantity

3000 4000 8000 10000

PEMD10

SOT666 2 mm pitch, 8 mm tape and reel

-

-

-315 -

4 mm pitch, 8 mm tape and reel

-

-115 -

-

PUMD10

SOT363 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -

-

-135

4 mm pitch, 8 mm tape and reel; T2 [3] -125 -

-

-165

[1] For further information and the availability of packing methods, see Section 14.

[2] T1: normal taping

[3] T2: reverse taping

11. Soldering

2.75

2.45

2.1

1.6

0.538

2 1.7 1.075

0.55

(2×)

0.4

(6×) 0.25 0.3

(2×) (2×)

1.7

0.45

0.6

(4×)

(2×)

0.5

0.65

(4×)

(2×)

0.325 0.375

(4×) (4×)

Reflow soldering is the only recommended soldering method.

Fig 18. Reflow soldering footprint PEMD10 (SOT666)

solder lands

placement area

solder paste

occupied area

Dimensions in mm

sot666_fr

PEMD10_PUMD10

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 6 — 4 January 2012

© NXP B.V. 2012. All rights reserved.

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