MJ15016 Ver la hoja de datos (PDF) - Inchange Semiconductor

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MJ15016

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

Product Specification

MJ15016

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-emitter sustaining voltage IC=-0.2A ;IB=0

-120

V

VCEsat-1 Collector-emitter saturation voltage IC=-4A; IB=-0.4A

-1.1

V

VCEsat-2 Collector-emitter saturation voltage IC=-10A; IB=-3.3A

-3.0

V

VCEsat-3 Collector-emitter saturation voltage IC=-15A; IB=-7.0A

VBE

Base-emitter on voltage

IC=-4A ; VCE=-4V

ICEO

Collector cut-off current

ICEV

Collector cut-off current

IEBO

Emitter cut-off current

VCE=-60V; VBE(off)=0

VCE=Rated Value; VBE(off)=1.5V

TC=150℃

VEB=-7V; IC=0

-5.0

V

-1.8

V

-0.1 mA

-1.0

-6.0

mA

-0.2 mA

hFE-1

DC current gain

IC=-4A ; VCE=-2V

10

70

hFE-2

DC current gain

IC=-4A ; VCE=-4V

20

hFE-3

DC current gain

IC=-10A ; VCE=-4V

5

Is/b

Second breakdown collector current VCE=-60Vdc,t=0.5 s,

With base forward biased

Nonrepetitive

-3.0

COB

Output capacitance

IE=0 ; VCB=-10V;f=1.0MHz

60

70

A

600

pF

fT

Transition frequency

IC=-1A ; VCE=-4V;f=1.0MHz

2.2

MHz

2

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