SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
MJ15027
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA ;IC=0
VCE(sat) Collector-emitter saturation voltage IC=-10A; IB=-1A
VBE
Base-emitter on voltage
IC=-5A ; VCE=-5V
ICBO
Collector cut-off current
VCB=-200V; IE=0
IEBO
Emitter cut-off current
VEB=-7V; IC=0
hFE
DC current gain
IC=-5A ; VCE=-5V
fT
Transition frequency
IC=-0.5A ; VCE=-12V
MIN TYP. MAX UNIT
-200
V
-7
V
-2.0
V
-1.5
V
-0.1 mA
-0.1 mA
25
150
15
MHz
2