MJ3001 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

fabricante

MJ3001

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO

Collector-emitter

breakdown voltage

MJ3000

MJ3001

IC=0.1A ;IB=0

VCEsat-1 Collector-emitter saturation voltage IC=5A; IB=20mA

VCEsat-2 Collector-emitter saturation voltage IC=10A; IB=50mA

VBE

Base-emitter on voltage

IC=5A ; VCE=3V

MJ3000

VCE=60V; RBE=1.0kΩ

TC=150℃

ICER

Collector cut-off current

MJ3001

VCE=80V; RBE=1.0kΩ

TC=150℃

MJ3000 VCE=30V; IB=0

ICEO

Collector cut-off current

MJ3001 VCE=40V; IB=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE

DC current gain

IC=5A ; VCE=3V

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c

Thermal resistance junction to case

Product Specification

MJ3000/3001

MIN TYP. MAX UNIT

60

V

80

2.0

V

4.0

V

3.0

V

1.0

5.0

mA

1.0

5.0

1.0 mA

1000

2.0 mA

MAX

1.17

UNIT

℃/W

2

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