FZT603 Ver la hoja de datos (PDF) - Diodes Incorporated.
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FZT603 Datasheet PDF : 7 Pages
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Diodes Incorporated
FZT603
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 11)
Emitter-Base Breakdown Voltage
Collector-Base Cut-Off Current
Collector-Emitter Cut-Off Current
Emitter Cutoff Current
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICES
IEBO
DC Current Gain (Note 11)
hFE
Min
100
80
10
-
-
-
-
3,000
5,000
3,000
2,000
Typ
240
110
16
—
—
—
14,000
15,000
14,000
10,000
2,000
750
Collector-Emitter Saturation Voltage (Note 11)
VCE(sat)
—
—
0.79
0.80
0.88
0.99
0.86
Base-Emitter Saturation Voltage (Note 11)
Base-Emitter Turn-On Voltage (Note 11)
Input Capacitance (Note 11)
Output Capacitance (Note 11)
VBE(sat)
—
VBE(on)
—
Cibo
—
Cobo
—
1.70
1.50
90
15
Current Gain-Bandwidth Product (Note 11)
fT
150
—
Turn-On Time
Turn-Off Time
ton
—
0.5
toff
—
1.6
Note:
11. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.
Max
—
—
—
10
10
10
100
—
100,000
—
—
—
—
0.88
0.90
1.00
1.13
—
1.95
1.75
—
—
—
—
—
Unit
V
V
V
nA
µA
µA
nA
—
V
V
V
pF
pF
MHz
µs
µs
Test Condition
IC = 100µA
IC = 10mA
IE = 100µA
VCB = 80V
VCB = 80V, TA = +100°C
VCES = 80V
VEB = 8V
IC = 50mA, VCE = 5V
IC = 500mA, VCE = 5V
IC = 1A, VCE = 5V
IC = 2A, VCE = 5V
IC = 5A, VCE = 5V
IC = 6A, VCE = 5V
IC = 250mA, IB = 0.25mA
IC = 0.4A, IB = 0.4mA
IC = 1A, IB = 1mA
IC = 2A, IB = 20mA
IC = 2A, IB = 20mA,TJ = +150°C
IC = 2A, IB = 20mA
IC = 2A, VCE = 5V
VEB = 0.5V, f = 1MHz
VCB = 10V, f = 1MHz
VCE = 10V, IC = 100mA,
f=20MHz
VCC = 10V, IC = 500mA
IB1 = -IB2 = 0.5mA
FZT603
Document number: DS33146 Rev. 4 - 2
4 of 7
www.diodes.com
March 2015
© Diodes Incorporated
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