CF5010BN1-1 Ver la hoja de datos (PDF) - Nippon Precision Circuits
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CF5010BN1-1 Datasheet PDF : 25 Pages
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SM5010 series
5010FN× series
3V operation: VDD = 2.7 to 3.6V, VSS = 0V, Ta = −10 to +70°C unless otherwise noted.
Parameter
Symbol
Condition
Rating
Unit
min
typ
max
HIGH-level output voltage VOH Q: Measurement cct 1, VDD = 2.7V, IOH = 8mA
2.2
2.4
–
V
LOW-level output voltage
VOL Q: Measurement cct 2, VDD = 2.7V, IOL = 8mA
–
0.3
0.4
V
HIGH-level input voltage
VIH INHN
2.0
–
–
V
LOW-level input voltage
VIL INHN
–
–
0.5
V
Output leakage current
IZ
Q: Measurement cct 2, INHN = LOW,
VDD = 3.6V
VOH = VDD
VOL = VSS
–
–
10
µA
–
–
10
Current consumption
IDD
Measurement cct 3, load cct 1,
INHN = open, CL = 15pF
5010FNA, FNC
f = 30MHz
–
5010FND
f = 40MHz
–
8
16
mA
10
20
INHN pull-up resistance
RUP Measurement cct 4
5010FNA
40
100
250
kΩ
3.57
4.2
4.83
Feedback resistance
Rf Measurement cct 5
5010FNC
5010FND
2.63
3.1
3.57
kΩ
1.87
2.2
2.53
5010FNA
11.7
13
14.3
Built-in capacitance
CG
5010FNC
Design value. A monitor pattern on a 5010FND
wafer is tested.
5010FNA
9.9
11
12.1
11.7
13
14.3
pF
13.5
15
16.5
CD
5010FNC
15.3
17
18.7
5010FND
15.3
17
18.7
SEIKO NPC CORPORATION —12
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