BUX22 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

fabricante

BUX22

Silicon NPN Power Transistor

Inchange Semiconductor 

isc Silicon NPN Power Transistor

isc Product Specification

BUX22

DESCRIPTION

·Fast Switching Speed

·High DC Current Gain-hFE=20~60@IC = 10A

·Low Saturation Voltage-

VCE(sat)= 1.0V(Max)@ IC = 10A

APPLICATIONS

·Designed for use in motor control and switching

circuits applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

VCEX

VCEO

Collector-Base Voltage

Collector-Emitter Voltage

(VBE= -1.5V)

Collector-Emitter Voltage

300

V

300

V

250

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

40

A

ICM

Collector Current-Peak

50

A

IB

Base Current-Continuous

8

A

PC

Collector Power Dissipation @TC=25℃ 350

W

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature

-65~200 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance,Junction to Case

MAX UNIT

0.5 ℃/W

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

1

Share Link: