BUX47A Ver la hoja de datos (PDF) - New Jersey Semiconductor

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BUX47A

Silicon NPN Power Transistor

New Jersey Semiconductor 

Silicon NPN Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 0.2A; IB= 0; L= 25mH

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 50mA; I0= 0

VcE(sat)-1 Collector-Emitter Saturation Voltage lc= 5A; IB= 1A

VcE(sat)-2 Collector-Emitter Saturation Voltage lc= 8A; IB= 2.5A

VBE(sat) Base-Emitter Saturation Voltage

ICER

Collector Cutoff Current

ICEV

Collector Cutoff Current

IFBO

Emitter Cutoff Current

lc= 5A; IB= 1A

VCE=850V; RBE= 10 Q

VCE=850V; RBE= 10Q;Tc=125r

VCE=850V; VBE= -2.5V

Vce=850V; VBE= -2.5V; TC=125°C

VEB= 5V; lc= 0

Switching times Resistive Load

ton

Turn-on Time

ts

Storage Time

tf

Fall Time

lc= 5A; I81=-IB2= 1A; Vcc= 150V

BUX47A

MIN MAX UNIT

450

V

7

30

V

1.5

V

3.0

V

1.6

V

0.4

3

mA

0.15

1.5

mA

1.0

mA

0.7

us

3.0

us

0.8

|J S

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