BLU30/12 Ver la hoja de datos (PDF) - Philips Electronics

Número de pieza

componentes Descripción

fabricante

BLU30/12

UHF power transistor

Philips Electronics 

Philips Semiconductors

UHF power transistor

CHARACTERISTICS

Tj = 25 °C unless otherwise specified

Collector-base breakdown voltage

IC = 50 mA; open emitter

Collector-emitter breakdown voltage

IC = 100 mA; open base

Emitter-base breakdown voltage

IE = 10 mA; open collector

Collector cut-off current

VBE = 0; VCE = 16 V

Second breakdown energy

L = 25 mH; f = 50 Hz; RBE = 10 Ω

D.C. current gain

IC = 4 A; VCE = 10 V

Collector capacitance at f = 1 MHz(1)

IE = ie = 0; VCB = 12,5 V

Feed-back capacitance at f = 1 MHz(1)

IC = 0; VCE = 12,5 V

Collector-flange capacitance

Note

1. Device mounted in SOT-119 envelope without inputmatching.

Product specification

BLU30/12

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICES

ESBR

hFE

>

>

>

<

>

>

typ.

Cc

typ.

Cre

typ.

Ccf

typ.

36 V

16,5 V

4V

22 mA

8 mJ

15

60

85 pF

52 pF

3 pF

handbook,8h0alfpage

hFE

60

VCE = 12.5 V

10 V

MDA326

40

20

0

0

4

8

12

16

IC (A)

Fig.4 Tj = 25 °C; typ. values.

January 1985

handboo2k,5h0alfpage

Cc

(pF)

210

MDA327

170

130

90

50

0

4

8

12

16

20

VCB (V)

Fig.5 IE = ie = 0; f = 1 MHz; typ. values.

4

Share Link: