BD442 Ver la hoja de datos (PDF) - Comset Semiconductors
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BD442 Datasheet PDF : 3 Pages
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BD440 – BD442
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
ICBO
Collector cut-off current
IE= 0, VCB= -60 V
IE= 0, VCB= -80 V
ICES
Collector cut-off current
VBE= 0, VCE= -60 V
VBE= 0, VCE= -80 V
IEBO
Emitter cut-offcurrent
IC= 0
VEB= -5 V
VCEO(SUS)
Collector-Emitter
sustaning Voltage (*)
IB= 0
IC= -100 mA
VCE(SAT)
Collector-Emitter
saturation Voltage (*)
IC= -2 A
IB= -200 mA
IC= -10 mA
VBE
Base-Emitter Voltage(*)
VCE= -5 V
IC= -2 A
VCE= -1 V
IC= -10 mA
VCE= -5 V
hFE
DC Current Gain (*)
IC= -500 mA
VCE= -1 V
IC= -2 A
VCE= -1 V
fT
Transition frequency
IC= -250 mA
VCE= -1 V
(*) Measured under pulse conditions :tP <300µs, δ <1.5%
BD440
BD442
BD440
BD442
BD440
BD442
BD440
BD442
BD440
BD442
BD440
BD442
BD440
BD442
BD440
BD442
BD440
BD442
BD440
BD442
BD440
BD442
Min Typ Max Unit
-
- -100
µA
-
- -100
-
-
-1 mA
-60 -
-80 -
-
-
V
-
- -0.8 V
- -0.58 -
V
-
- -1.5 V
20 - 130
15 - 130
40 - 140 -
25 -
-
15 -
-
3
-
- MHz
25/09/2012
COMSET SEMICONDUCTORS
2|3
27/08/2012
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