BD439 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
fabricante
BD439 Datasheet PDF : 2 Pages
| |||
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Ona.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BD439
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEo(sus)= 60V(Min)
• Complement to type BD440
APPLICATIONS
• Designed for medium power linear and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCES
Collector-Emitter Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
Ic
Collector Current-Continuous
4
A
I CM
Collector Current-Pulse
7
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25'C
Tj
Junction Temperature
1
A
36
W
150
•c
Tstg
Storage Temperature Range
-65-150
"C
•
_i
! 23
><
PIN 1. BETTER
2. COLLECTOR
3. BASE
TO-1 26 package
:r,j-[
&r : o
\
I* T
H-
V
T
f D-»
1
—1W G J-
D ni • •i
23
i«S i
~"1
t
A•
I•
i.
-*-J
K ~"
••-R
mm
DIM MIN MAX
A 10,70 10.90
B 7.70 7,90
C 2.60 2.80
D 0.66 0.86
F 3.10 3.30
G 4.48 4.6S
H 2.00 2.20
J 1.35 1.55
K 16.10 1630
0 3.70 3.90
R 0.40 0.60
V 1.17 1.37
N.I Scmi-Cimdiictors reserves the right to change tost conditions, parameter limits and package dimensions \vitruwt
noiice. Information furnishal by N.I Semi-Conductors is helio\cd to he boih accurate and reliable ;it the lime of ijoi
U> press. I loue\er. N.I Seiiii-Condiieior.s assumes no responsihilily for an> errors or omissions discovered in its use.
N I Semi-t'iMidticiors eiicoiinme-. cn^loincrs.lo \erily (hat datasheets are eiinvnl helore placing orders
OunliK/
Share Link: 