MGW20N120
6
VCC = 720 V
5
VGE = 15 V
TJ = 25°C
4
3
2
IC = 25 A
15 A
10 A
1
0
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (OHMS)
Figure 7. Total Switching Losses versus
Gate Resistance
5
VCC = 720 V
VGE = 15 V
RG = 20 Ω
4 TJ = 125°C
3
2
1
10
12
14
16
18
20
IC, COLLECTOR–TO–EMITTER CURRENT (AMPS)
Figure 9. Turn–Off Losses versus
Collector–to–Emitter Current
100
5
VCC = 720 V
VGE = 15 V
4 RG = 20 Ω
3
2
1
IC = 20 A
15 A
10 A
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
Figure 8. Total Switching Losses versus
Case Temperature
40
30
TJ = 125°C
20
TJ = 25°C
10
0
0
1
2
3
4
5
VFM, FORWARD VOLTAGE DROP (VOLTS)
Figure 10. Maximum Forward Drop versus
Instantaneous Forward Current
10
1
VGE = 15 V
RGE = 20 Ω
TJ = 125°C
0.1
1
10
100
1000
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 11. Reverse Biased
Safe Operating Area
4
Motorola TMOS Power MOSFET Transistor Device Data