60
TJ = 25°C
50
40
30
TYPICAL ELECTRICAL CHARACTERISTICS
VGE = 20 V
15 V
17.5 V
60
TJ = 125°C
50
40
12.5 V
30
MGW20N120
VGE = 20 V
17.5 V
15 V
12.5 V
20
20
10 V
10
10 V
10
0
0
2
4
6
8
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics, TJ = 25°C
0
0
2
4
6
8
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 2. Output Characteristics, TJ = 125°C
60
VCE = 10 V
250 µs PULSE WIDTH
40
20
TJ = 125°C
25°C
4
VGE = 15 V
250 µs PULSE WIDTH
3
2
IC = 20 A
15 A
10 A
0
5 6 7 8 9 10 11 12 13 14 15
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
Figure 3. Transfer Characteristics
10000
VCE = 0 V
TJ = 25°C
Cies
1000
Coes
100
Cres
10
0
5
10
15
20
25
GATE–TO–EMITTER OR COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 5. Capacitance Variation
1
– 50
0
50
100
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Collector–to–Emitter Saturation
Voltage versus Junction Temperature
16
QT
14
12
10
8
Q1
Q2
6
4
TJ = 25°C
IC = 20 A
2
0
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70
Qg, TOTAL GATE CHARGE (nC)
Figure 6. Gate–to–Emitter Voltage versus
Total Charge
Motorola TMOS Power MOSFET Transistor Device Data
3