MGW20N120
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(VGE = 0 Vdc, IC = 25 µAdc)
Temperature Coefficient (Positive)
Emitter–to–Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc)
Zero Gate Voltage Collector Current
(VCE = 1200 Vdc, VGE = 0 Vdc)
(VCE = 1200 Vdc, VGE = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc)
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage
(VGE = 15 Vdc, IC = 10 Adc)
(VGE = 15 Vdc, IC = 10 Adc, TJ = 125°C)
(VGE = 15 Vdc, IC = 20 Adc)
Gate Threshold Voltage
(VCE = VGE, IC = 1.0 mAdc)
Threshold Temperature Coefficient (Negative)
Forward Transconductance (VCE = 10 Vdc, IC = 20 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VCE = 25 Vdc, VGE = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VCC = 720 Vdc, IC = 20 Adc,
VGE = 15 Vdc, L = 300 mH
RG = 20 Ω, TJ = 25°C)
Energy losses include “tail”
Turn–Off Switching Loss
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VCC = 720 Vdc, IC = 20 Adc,
VGE = 15 Vdc, L = 300 mH
RG = 20 Ω, TJ = 125°C)
Energy losses include “tail”
Turn–Off Switching Loss
Gate Charge
(VCC = 720 Vdc, IC = 20 Adc,
VGE = 15 Vdc)
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25″ from package to emitter bond pad)
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
Symbol
BVCES
BVECS
ICES
IGES
VCE(on)
VGE(th)
gfe
Cies
Coes
Cres
td(on)
tr
td(off)
tf
Eoff
td(on)
tr
td(off)
tf
Eoff
QT
Q1
Q2
LE
Min
Typ
Max
Unit
1200
—
—
870
Vdc
—
—
mV/°C
25
—
—
Vdc
µAdc
—
—
100
—
—
2500
—
—
250
nAdc
Vdc
—
3.00
3.54
—
2.36
—
—
2.90
4.99
Vdc
4.0
6.0
8.0
—
10
—
mV/°C
—
12
—
Mhos
—
1860
—
pF
—
122
—
—
29
—
—
88
—
ns
—
103
—
—
190
—
—
284
—
—
1.65
3.75
mJ
—
83
—
ns
—
107
—
—
216
—
—
494
—
—
3.19
—
mJ
—
62
—
nC
—
21
—
—
25
—
nH
—
13
—
2
Motorola TMOS Power MOSFET Transistor Device Data