datasheetbank_Logo
búsqueda de Hoja de datos y gratuito Fichas de descarga

BB149A,115 Ver la hoja de datos (PDF) - NXP Semiconductors.

Número de pieza
componentes Descripción
fabricante
BB149A,115
NXP
NXP Semiconductors. 
BB149A,115 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
NXP Semiconductors
BB149A
UHF variable capacitance diode
4. Marking
Table 3. Marking
Type number
BB149A
Marking code
PL
5. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VR
reverse voltage
-
VRM
peak reverse voltage
in series with a
-
10 kresistor
IF
forward current
-
Tstg
storage temperature
55
Tj
junction temperature
55
Max Unit
30
V
35
V
20
mA
+150 C
+125 C
6. Characteristics
Table 5. Characteristics
Tj = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
IR
reverse current VR = 30 V
see Figure 2
-
-
Tj = 85 C; see Figure 2
-
-
rs
diode series
f = 470 MHz
resistance
[1] -
0.6
Cd
C-----d----1---V----
Cd2V
diode
capacitance
f = 1 MHz; see Figure 1 and 3
VR = 1 V
VR = 28 V
capacitance ratio f = 1 MHz
18.22 -
1.951 2.1
-
1.27
C-----d----1---V------ capacitance ratio f = 1 MHz
C d 28 V
8.45 9
C-----d----2---5---V---capacitance ratio f = 1 MHz
C d 28 V
-
1.05
----C----d-
capacitance
matching
VR = 1 V to 28 V; in a
sequence of 10 diodes
Cd
(gliding)
-
-
[1] VR is the value at which Cd = 9 pF
Max Unit
10
nA
200 nA
0.75
21.26 pF
2.225 pF
-
10.9
-
2
%
BB149A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 5 September 2011
© NXP B.V. 2011. All rights reserved.
2 of 8

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]