RB521S-40 Ver la hoja de datos (PDF) - Jiangsu High diode Semiconductor Co., Ltd
Número de pieza
componentes Descripción
fabricante
RB521S-40 Datasheet PDF : 4 Pages
| |||
RB521S-40
SOD523 Plastic-Encapsulate Diodes
Schottky Rectifier
Features
● Small surface mounting type
● Low reverse current and low forward voltage
● High reliability
Applications
● Rectifier
Marking
●S
SOD523
Parameter
DC reverse voltage
Mean rectifying current
Non-repetitive Peak Forward Surge Current @ t=8.3ms
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Symbol
VR
IO
IFSM
PD
RθJA
TJ
TSTG
Value
40
0.2
1
0.15
667
125
-55 ~ +150
Unit
V
A
A
W
℃/W
℃
℃
Electrical Characteristics（Ta=25℃ Unless otherwise specified）
Parameter
Symbol
Test Condition
Min Type Max Unit
Reverse voltage
VBR
IR =100uA
40
V
IF =10mA
0.30
V
Forward voltage
VF
IF =100mA
0.45
V
IF =200mA
0.50
V
Reverse current
VR =10V
IR
VR =40V
20
µA
90
µA
High Diode Semiconductor
1
Share Link: 