KSC5504DT Ver la hoja de datos (PDF) - Fairchild Semiconductor

Número de pieza

componentes Descripción

fabricante

KSC5504DT

NPN Triple Diffused Planar Silicon Transistor

Fairchild Semiconductor 

Typical Characteristics (Continued)

500

T = 125 oC

j

T = 25 oC

j

I =5I =2I

C

B1

B2

V = 300 V

CC

PW = 40 us

100

0.5

1

3

I [A ], CO LLE CTO R C URR E NT

C

Figure 19. Resistive Switching Time, ton

500

T = 25 oC

j

I =5I =2I

C

B1

B2

V = 300 V

CC

PW = 40 us

T = 125 oC

j

100

0.5

1

3

I [A], CO LLECTO R CURRENT

C

Figure 21. Resistive Switching Time, tfi

1400

1200

1000

I =I

B1

B2

V = 15 V

CC

V = 300 V

Z

L = 200 uH

C

I = 2 A , T = 125 oC

C

j

800

600

I = 1 A , T = 125 oC

C

j

400

200

0

1

IC = 2 A , Tj = 25 oC

5

h , Forced G ain

FE

I = 1 A , T = 25 oC

C

j

10

11

Figure 23. Inductive Switching Time, tfi

©2001 Fairchild Semiconductor Corporation

5

I =5I =2I

C

B1

B2

V = 300 V

CC

PW = 40 us

T = 125 oC

j

T = 25 oC

j

1

0.5

1

3

I [A], CO LLE CTO R CURRENT

C

Figure 20. Resistive Switching Time, tsi

8

I =I

B1

B2

V = 15 V

CC

V = 300 V

Z

L = 200 uH

C

6

4

I = 2 A , T = 25 oC

C

j

2

I = 2 A , T = 125 oC

C

j

I = 1 A , T = 25 oC

C

j

IC = 1 A , Tj = 125 oC

0

1

5

10

11

h , FORCED GAIN

FE

Figure 22. Inductive Switching Time, tsi

2500

2000

IB1 = IB2

V = 15 V

CC

V = 300 V

Z

LC = 200 uH

1500

1000

I = 2 A , T = 125 oC

C

j

I = 2 A , T = 25 oC

C

j

500

0

1

I = 1 A , T = 125 oC

C

j

I = 1 A , T = 25 oC

C

j

5

h , Forced G ain

FE

10

11

Figure 24. Inductive Switching Time, tc

Rev. A1, June 2001

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