KSC5504DT Ver la hoja de datos (PDF) - Fairchild Semiconductor
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fabricante
KSC5504DT Datasheet PDF : 10 Pages
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Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min Typ. Max. Units
tfr
Diode Froward Recvery Time
IF=0.4A
(di/dt=10A/µs)
IF=1A
IF=2A
VCE(DSAT) Dynamic Saturation Voltage
IC=1A,
IB1=100mA
VCC=300V
IC=2A,
IB1=400mA
VCC=300V
RESISTIVE LOAD SWITCHING (D.C < 10%, Pulse Width=40µs)
@ 1µs
@ 3µs
@ 1µs
@ 3µs
770
ns
870
ns
1.2
µs
10
V
3
V
10
V
2
V
tON
Turn ON Time
tSTG
Storage Time
tF
Fall Time
tON
Turn ON Time
tSTG
Storage Time
tF
Fall Time
INDUCTIVE LOAD SWITCHING (VCC=15V)
tSTG
Storage Time
tF
Fall Time
tC
Cross-over Time
tSTG
Storage Time
tF
Fall Time
tC
Cross-over Time
IC=2A, IB1=0.4A
IB2=1A,
VCC=300V
RL = 150Ω
IC=2A, IB1=0.4A
IB2=0.4A,
VCC=300V
RL = 150Ω
TC=25°C
TC=125°C
TC=25°C
TC=125°C
TC=25°C
TC=125°C
TC=25°C
TC=125°C
TC=25°C
TC=125°C
TC=25°C
TC=125°C
IC=2A, IB1=0.4A
IB2=1A, VZ=300V
LC=200H
IC=2A, IB1=0.4A
IB2=0.4A,
VCC=300V
LC=200H
TC=25°C
TC=125°C
TC=25°C
TC=125°C
TC=25°C
TC=125°C
TC=25°C
TC=125°C
TC=25°C
TC=125°C
TC=25°C
TC=125°C
160 250 ns
170
ns
1.5
2.5
µs
1.7
µs
125 300 ns
160
ns
170 300 ns
175
ns
2.8
3.5
µs
3.1
µs
400 650 ns
850
ns
1.75 2.5
µs
2.2
µs
100 250 ns
100
ns
210 400 ns
250
ns
3.6
4.5
µs
4.2
µs
170 350 ns
320
ns
540 800 ns
1.1
ns
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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