KSC5047 Ver la hoja de datos (PDF) - Fairchild Semiconductor

Número de pieza

componentes Descripción

fabricante

KSC5047

NPN Epitaxial Silicon Transistor

Fairchild Semiconductor 

KSC5047

Feature

• High Current Gain

• Low Collector Emitter Saturation Voltage

1

TO-3P

1.Base 2.Collector 3.Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Symbol

Parameter

VCBO

VCEO

VEBO

IC

IB

PC

TJ

TSTG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

Collector Dissipation (TC=25°C)

Junction Temperature

Storage Temperature

Electrical Characteristics TC=25°C unless otherwise noted

Symbol

Parameter

Test Condition

BVCEO

ICBO

IEBO

hFE

VCE(sat)

VBE(sat)

tON

tSTG

tF

Collector-Emitter Breakdown Voltage

Collector Cut-off Current

Emitter-Base Breakdown Voltage

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Turn On Time

Storage Time

Fall Time

IC = 50mA, IB = 0

VCB = 100V, IE = 0

VEB = 15V, IC= 0

VCE = 5V, IC = 5A

IC = 5A, IB = 0.12A

IC = 5A, IB = 0.12A

VCC = 20V, IC = 5A

IB1 = - I B2 = 0.12A

RL = 4Ω

Value

100

50

15

15

4

100

150

- 55 ~ 150

Units

V

V

V

A

A

W

°C

°C

Min.

50

40

Typ.

0.5

2.5

0.5

Max.

100

100

Units

V

µA

µA

0.5

V

1.2

V

µs

µs

µs

©2002 Fairchild Semiconductor Corporation

Rev. B1, September 2002

Share Link: