KSA1182 Ver la hoja de datos (PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.

Número de pieza

componentes Descripción

fabricante

KSA1182

TRANSISTOR (PNP)

Shenzhen Jin Yu Semiconductor Co., Ltd.  

KSA1182

TRANSISTOR (PNP)

SOT-23

FEATURES

Complement to KSC2859

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value

-35

-30

-5

-0.5

150

150

-55-150

Units

V

V

V

A

mW

℃

℃

1. BASE

2. EMITTER

3. COLLECTOR

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

Symbol Test conditions

V(BR)CBO IC=-100μA, IE=0

V(BR)CEO IC=-1mA, IB=0

V(BR)EBO IE=-100μA, IC=0

ICBO

VCB=-35V, IE=0

IEBO

VEB=-5V, IC=0

hFE(1) VCE=-1V, IC=-100mA

hFE(2) VCE=-6V, IC=-400mA

VCE(sat) IC=-100mA, IB=-10mA

VBE

VCE=-1V, IC=-100mA

fT

VCE=-6V, IC=-20mA

Cob

VCB=-6V, IE=0, f=1MHz

MIN TYP MAX UNIT

-35

V

-30

V

-5

V

-0.1 μA

-0.1 μA

70

240

25

-0.25 V

-1.0

V

200

MHz

13

pF

CLASSIFICATION OF hFE(1)

Rank

Range

Marking

１　

JinYu

semiconductor

O

70-140

F1O

www.htsemi.com

Y

120-240

F1Y

Ｄａｔｅ：２０１１／０５

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