FDD2670 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
fabricante
FDD2670 Datasheet PDF : 5 Pages
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Typical Characteristics
15
ID = 3.6 A
12
9
VDS = 40V
70
V
100 V
6
3
0
0
5
10
15
20
25
30
35
40
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
0.1
0.01
VGS = 10V
SINGLE PULSE
RθJA = 96oC/W
TA = 25oC
100µs
10ms
100ms
1s
10s
DC
0.001
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
1000
Figure 9. Maximum Safe Operating Area.
2000
1500
CISS
1000
f = 1MHz
VGS = 0 V
500
COSS
CRSS
0
0
20
40
60
80
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
100
80
60
40
20
0
0.01
0.1
SINGLE PULSE
RθJA = 96°C/W
TA = 25°C
1
10
t1, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.001
RθJA(t) = r(t) + RθJA
RθJA = 96°C/W
SINGLE PULSE
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.01
0.1
1
10
t1, TIME (sec)
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD2670 Rev C1(W)
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