2SC2660 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
fabricante
2SC2660 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage, lc= 5mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
lc= 500u A; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 500u A; lc= 0
VcE(sat) Collector-Emitter Saturation Voltage
lc= 500mA; IB= 50mA
VBEIOII)
Base-Emitter On Voltage
lc= 400mA; VCE= 10V
ICBO
Collector Cutoff Current
VCB= 200V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; lc= 0
hpE-1
DC Current Gain
lc=1 50mA; VCE= 10V
hFE-2
DC Current Gain
lc= 400mA; VCE= 10V
• hpE-1 Classifications
Q
P
60-140
100-240
2SC2660
MIN TYP. MAX UNIT
150
V
200
V
6
V
1.0
V
1.0
V
50
MA
50
uA
60
240
50
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