C2613 Ver la hoja de datos (PDF) - New Jersey Semiconductor
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C2613 Datasheet PDF : 2 Pages
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Lptoaucti, One..
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC2613
DESCRIPTION
• High Collector-Emitter Sustaining Voltage-
: VCEO<SUS>= 400V(Min)
• Good Linearity of hFe
• Low Saturation Voltage
APPLICATIONS
• Designed for high voltage, high speed and high power
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25-Q
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
500
V
VCEO Collector-Emitter Voltage
400
V
VEBO Emitter-Base Voltage
7
V
Ic
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25"C
Tj
Junction Temperature
2.5
A
40
W
150
'C
Tstg
Storage Temperature Range
-55-150
"C
-<
4
l
PIN 1.BASE
2. COLLECTOR
3. EMITTER
TO-220C package
- BM
- V «i 1
U i *jn
Af
r!
*
H
1
'
K
»
"5J50
.0 1 (^
H ci r*
c1
I
r*
—i
»r j
-
mm
DIM M!N MAX
A 15,50 M5.90
B 9.90 10.20
~ 4.20 450
D 0.70 0.90
F 3.40 3.70
G 4.98 5.1*
H 2.6S 2.90
j 0.44 0.60
K 13.00 13.40
L 1.20 1.45
Q 2.70 2.90
R 2,30 2.70
S 1.29 1.35
_i 6.45 6.65
V 8.60 9M
N.I Soiiii-Coutluetors reserves the right to change test eonditions. parameter limits and package dimensionswithout
notice. Information furnished by N.I Semi-Conductors is believed to he both accurate and reliable at the time of goint
to press. I louever, N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verily thai datasheets are current before placing orders.
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