B1260 Ver la hoja de datos (PDF) - Galaxy Semi-Conductor
Número de pieza
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fabricante
B1260 Datasheet PDF : 4 Pages
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Power Transistor(-80V,-1A)
FEATURES
z High breakdown voltage and
high current.
BVCEO=-80V,IC=-1A
z Good hFEVLinearity.
z Low VCE(sat).
z Complements the 2SD1898.
Pb
Lead-free
APPLICATIONS
z Epitaxial planar type PNP silicon transistor
Production specification
2SB1260
SOT-89
ORDERING INFORMATION
Type No.
Marking
2SB1260
ZL
Package Code
SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Unit
VCBO
VCEO
VEBO
IC
Pc
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current –DC
-Pulse
Collector power Dissipation
-80
V
-80
V
-5
V
-1
A
-2
0.5
W
2 *1
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55 to +150
℃
*1: When mountef on a 40*40*0.7mm ceramic board.
E045
Rev.A
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