2SA1291 Ver la hoja de datos (PDF) - New Jersey Semiconductor

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fabricante

2SA1291

Silicon PNP Power Transistor

New Jersey Semiconductor 

Silicon PNP Power Transistor

ELECTRICAL CHARACTERISTICS

Tc=2512 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage lc= -1mA; RBE= °°

V(BR)CBO Collector-Base Breakdown Voltage

lc=-1mA; IE=0

V(BR)EBO Emitter-Base Breakdown Voltage

lE=-1mA; I0=0

VcE(sat) Collector-Emitter Saturation Voltage I0= -5A; IB= -0.25A

ICBO

Collector Cutoff Current

VCB= -40V; IE= 0

IEBO

Emitter Cutoff Current

VEB= -4V; lc= 0

HFE

DC Current Gain

lc= -1A; VCE= -2V

fr

Current-Gain—Bandwidth Product

lc= -1A; VCE= -5V

Switching Times

ton

Turn-on Time

lstg

Storage Time

tf

Fall Time

lc= -5A, RL= 6.67D ,

IB1= -|B2= -Q.25A, Vcc«=-20V

Classifications

Q

R

S

70-140 100-200 140-280

2SA1291

MIN TYP. MAX UNIT

-60

V

-80

V

-5

V

-0.4

V

-100 u A

-100 u A

70

280

100

MHz

0.1

|J S

0.5

Ms

0.1

Vs

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