D1005 Ver la hoja de datos (PDF) - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

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D1005

Plastic-Encapsulate Transistors

GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. 

Plastic-Encapsulate Transistors

FEATURES

• High Collector to Base Voltage.

• Excellent DC Current Gain Linearity.

• Complements to PNP type 2SB804.

Maximum Ratings (Ta=25 unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

VCBO

100

V

Collector-Emitter Voltage

VCEO

80

V

Emitter-Base Voltage

VEBO

5

V

Collector Current -Continuous

IC

1

A

Collector Power dissipation

Storage Temperature

PC

0.75

W

Tstg

-55to +150

2SD1005 (NPN)

1. BASE

2. COLLECTO

3. EMITTER

SOT-89

ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)

Parameter

Symbol

Test conditions

Min Typ Max Unit

Collector cut-off current

ICBO

VCB=100V, IE=0

0.1

uA

Emitter cut-off current

IEBO

VEB=5V,IC=0

0.1

uA

Collector-emitter

saturation voltage

VCE(sat)

IC/IB=500mA/50mA

0.15

0.5 V

Base-emitter saturation voltage

VBE(sat)

IC/IB=500mA/50mA

0.9

1.5 V

Base-emitter voltage

VBE

VCE=10V,IC=10mA

0.6

0.63

0.7 V

DC current gain(note)

hFE

VCE=2V, IC=1mA

90

200 400

Current gain bandwidth product

fT

VCE=5V,IE=10mA

160

MHz

Output Capacitance

Cob

VCB=10V, f=1MHz ,IE=0A

12

pF

CLASSIFICATION OF hFE

Range

Marking

230-380

BW

340-600

BV

560-800

BU

GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.

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