SI3850DV-T1 Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
fabricante
SI3850DV-T1 Datasheet PDF : 8 Pages
| |||
Si3850DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N-CHANNEL
Output Characteristics
3.5
VGS = 5.0 thru 4.0 V
3.0
2.5
2.0
3.5 V
3.0 V
Transfer Characteristics
3.5
TC = −55_C
3.0
25_C
2.5
125_C
2.0
1.5
1.5
2.5 V
1.0
1.0
0.5
1.5 V
2.0 V
0.5
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS − Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.7
VGS = 3.0 V
0.6
0.5
VGS = 4.5 V
0.4
0.3
0.2
0.1
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
ID − Drain Current (A)
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VGS − Gate-to-Source Voltage (V)
Capacitance
120
100
80
Ciss
60
Coss
40
20
Crss
0
0
4
8
12
16
20
VDS − Drain-to-Source Voltage (V)
5
VGS = 10 V
ID = 1.2 A
4
Gate Charge
On-Resistance vs. Junction Temperature
2.0
VGS = 4.5 V
ID = 1.2 A
1.6
3
1.2
2
0.8
1
0.4
0
0.0
0.2
0.4
0.6
0.8
Qg − Total Gate Charge (nC)
0.0
−50 −25 0
25 50 75 100 125 150
TJ − Junction Temperature (_C)
Document Number: 70778
S-50132—Rev. D, 24-Jan-05
www.vishay.com
3
Share Link: 