DF45216 Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza

componentes Descripción

fabricante

DF45216

Fast Recovery Diode

Dynex Semiconductor 

1000

100

Conditions:

Tj = 125˚C,

VR = 100V

IF = 2000A

IF = 1000A

IF = 500A

IF = 200A

IF = 100A

DF452

10

1

10

100

1000

Rate of rise of reverse current dIR/dt - (A/µs)

Fig.5 Typical reverse recovery current vs rate of fall of forward current

0.1

d.c. Double side cooled

0.01

0.001

0.01

0.1

1

10

100

Time - (s)

Fig.6 Maximum (limit) transient thermal impedance - junction to case - (˚C/W)

5/7

Share Link: