5N90 Ver la hoja de datos (PDF) - Nell Semiconductor Co., Ltd
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5N90 Datasheet PDF : 8 Pages
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SEMICONDUCTOR
THERMAL RESISTANCE
SYMBOL
PARAMETER
Rth(j-c)
Thermal resistance, junction to case
TO-220AB
TO-220F
Rth(j-a)
Thermal resistance, junction to ambient
TO-220AB
TO-220F
5N90 Series RRooHHSS
Nell High Power Products
Min.
Typ.
Max. UNIT
1.0
3.25
ºC/W
62.5
62.5
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN. TYP. MAX. UNIT
OFF CHARACTERISTICS
V(BR)DSS
Drain to source breakdown voltage
ID = 250μA, VGS = 0V
900
V
▲ ▲ V(BR)DSS/ TJ Breakdown voltage temperature coefficient ID = 250μA, VDS =VGS
1.0
V/ºC
IDSS
Drain to source leakage current
VDS=900V, VGS=0V
VDS=720V, VGS=0V
TC=25°C
TC=125°C
10
μA
100
IGSS
Gate to source forward leakage current
Gate to source reverse leakage current
VGS = 30V, VDS= 0V
VGS = -30V, VDS= 0V
100
nA
-100
ON CHARACTERISTICS
RDS(ON)
Static drain to source on-state resistance
VGS(TH)
Gate threshold voltage
gfs
Forward transconductance
DYNAMIC CHARACTERISTICS
VGS=10V, lD=2.5A
VGS=VDS, ID=250μA
VDS=50V, lD=2.5A (Note 1)
2.25 2.8 Ω
3
5
V
4.0
S
CISS
COSS
Input capacitance
Output capacitance
VDS=25V, VGS=0V, f=1MHz
1200 1550
110 145 pF
CRSS
Reverse transfer capacitance
SWITCHING CHARACTERISTICS
15
20
td(ON)
tr
td(OFF)
Turn-on delay time
Rise time
Turn-off delay time
VDD=450V, VGS=10V
ID=5A, RGS=25Ω (Note1,2)
28
65
65 140
ns
65 140
tf
QG
QGS
QGD
Fall time
Total gate charge
Gate to source charge
Gate to drain charge (Miller charge)
VDD= 720V, VGS=10V
ID=5A, (Note1,2)
50 110
31
40
7.2
nC
15
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN. TYP. MAX. UNIT
VSD
Diode forward voltage
ISD = 5A, VGS = 0V
1.4 V
Is (IsD)
Continuous source to drain current
Integral reverse P-N junction
5
diode in the MOSFET
D (Drain)
ISM
Pulsed source current
G
(Gate)
A
12
S (Source)
trr
Reverse recovery time
Qrr
Reverse recovery charge
ISD = 5.4A, VGS = 0V,
dIF/dt = 100A/µs
610
ns
5.30
μC
Note: 1. Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
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