LH28F160BGHE-TTL12 Ver la hoja de datos (PDF) - Sharp Electronics
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LH28F160BGHE-TTL12 Datasheet PDF : 36 Pages
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LH28F160BG-TL/BGH-TL
6.2.3 DC CHARACTERISTICS (contd.)
SYMBOL
PARAMETER
NOTE VCC = 2.7 to 3.6 V UNIT
MIN.
MAX.
TEST
CONDITIONS
VIL Input Low Voltage
7
– 0.5
0.8
V
VIH Input High Voltage
7 0.7VCC VCC+0.3 V
VOL Output Low Voltage
VCC = VCC Min.
3, 7
0.4
V
IOL = 2.0 mA
VCC = VCC Min.
VOH1 Output High Voltage (TTL)
3, 7 0.85VCC
V
VOH2 Output High Voltage (CMOS)
3, 7
VPP Lockout Voltage during
VPPLK
4, 7
Normal Operations
VPP Voltage during Word Write or
VPPH1
Block Erase Operations
VPP Voltage during Word Write or
VPPH2
Block Erase Operations
VLKO VCC Lockout Voltage
VHH RP# Unlock Voltage
8, 9
NOTES :
1. All currents are in RMS unless otherwise noted. Typical
0.5
2.7
11.4
1.3
11.4
5.
IOH = –2.0 mA
VCC = VCC Min.
V
IOH = –100 µA
Y 1.5
V
3.6
V
R 12.6 V
AV
Block Erase and Word Write
12.6 V
for Boot Blocks
I NAutomatic Power Saving (APS) reduces typical ICCR to
2.
3.
4.
values at VCC = 3.0 V, VPP = 3.0 V and TA = +25˚C.
These currents are valid for all product versions
(packages and speeds).
M ICCWS and ICCES are specified with the device de-
selected. If reading or word writing in erase suspend
I mode, the device’s current draw is the sum of ICCWS or
ICCES and ICCR or ICCW, respectively.
L Includes RY/BY#.
Block erases and word writes are inhibited when VPP ≤
VPPLK, and not guaranteed in the range between VPPLK
E (max.) and VPPH1 (min.), between VPPH1 (max.) and
P R VPPH2 (min.), and above VPPH2 (max.).
3 mA at 2.7 V VCC in static operation.
6. CMOS inputs are either VCC±0.2 V or GND±0.2 V. TTL
inputs are either VIL or VIH.
7. Sampled, not 100% tested.
8. Boot block erases and word writes are inhibited when
the corresponding RP# = VIH or WP# = VIL. Block erase
and word write operations are not guaranteed with VIH <
RP# < VHH and should not be attempted.
9. RP# connection to a VHH supply is allowed for a
maximum cumulative period of 80 hours.
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