MJ11022 Ver la hoja de datos (PDF) - Inchange Semiconductor
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MJ11022 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
MJ11022
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 250V (Min.)
·High DC Current Gain-
: hFE= 400(Min.)@IC= 10A
·Low Collector Saturation Voltage-
: VCE (sat)= 1.0V(Max.)@ IC= 5.0A
APPLICATIONS
·Designed for general purpose amplifiers, low frequency
switching and motor control applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
250
VCEO
Collector-Emitter Voltage
250
VEBO
Emitter-Base Voltage
5
IC
Collector Current-Continunous
15
ICM
Collector Current-Peak
30
IBB
Base Current-Continunous
0.5
Collector Power Dissipation
PC
@TC=25℃
175
Tj
Junction Temperature
175
Tstg
Storage Temperature Range
-65~200
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
0.86 ℃/W
isc Website：www.iscsemi.cn
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