MJE5740 Ver la hoja de datos (PDF) - New Jersey Semiconductor
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MJE5740 Datasheet PDF : 2 Pages
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MJE574O MJE5741 MJE5742
ELECTRICAL CHARACTERISTICS — continued (Tc = 25°C unless otherwise noted)
Characteristic
Symbol
Win
Typ
Max
Unit
ON CHARACTERISTICS (1)
DC Current Gain (lc = 0.5 Adc, VCE = 5 Vdc)
(lc = 4 Adc, VCE = 5Vdc)
hFE
50
100
—
200
400
Collector-Emitter Saturation Voltage (lc = 4 Adc, IB = 0.2 Adc)
vCE(sat)
2
Vdc
(IC = 8Adc, IB = 0.4 Adc)
—
—
3
(1C = 4 Adc, IB = 0.2 Adc, TC = 100°C)
2.2
Base-Emitter Saturation Voltage (lc = 4 Adc, IB = 0.2 Adc)
vBE(sat)
2.5
Vdc
(IC = 8 Adc, IB = 0.4Adc)
—
—
3.5
(lc = 4 Adc, IB = 0.2 Adc, TC = 100°C)
2.4
Diode Forward Voltage (2) (Ip = 5 Adc)
Vf
—
—
2.5
Vdc
SWITCHING CHARACTERISTICS
Typical Resistive Load (Table 1)
Delay Time
Rise Time
Storage Time
Fall Time
(VCc = 250 Vdc, lc(pk) = 6 A
'B1 ~ 'B2 U.^o A, tp ^s p.s,
Duty Cycle < 1%)
Inductive Load, Clamped (Table 1)
«d
—
0.04
—
US
«r
—
0.5
—
(IS
*s
—
8
—
US
tf
—
2
_.
US
Voltage Storage Time
Crossover Time
OC(pk) = 6 A, VCE(pk) = 250 Vdc
IB1 = 6.06 A, VBE(off) = 5 Vdc)
tsv
—
4
—
US
tc
—
2
—
US
(1) Pulse Test: Pulse Width 300 us. Duty Cycle = 2%.
(2) The internal Collector-to-Emitter diode can eliminate the need for an external diode to clamp inductive loads. Tests have shown that the
Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers.
100
£ 80
g
§ 60
CzD
i 40
LU
Q
20
TYPICAL CHARACTERISTICS
s
,<J ^
s SEC;OND BF
\L DE
WNDERATING
V ^
\\O
N^ "X^
THE
ERATING
\\
X
\^
s
20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
TIME
Figure 2. Inductive Switching Measurements
lc, COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain
0.2
0.5
1
2
5
1C, COLLECTOR CURRENT (AMPS)
Figure 4. Base-Emitter Voltage
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