MJE15032 Ver la hoja de datos (PDF) - Inchange Semiconductor
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MJE15032 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
MJE15032
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA ;IB=B 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A ;IB= 0.1A
VBE(on) Base-Emitter On Voltage
IC= 1A ; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 150V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.5A ; VCE= 5V
hFE-2
DC Current Gain
IC= 1A ; VCE= 5V
hFE-3
DC Current Gain
IC= 2A ; VCE= 5V
fT
Current Gain-Bandwidth Product
IC= 0.5A; VCE= 10V; ftest= 1.0MHz
MIN MAX UNIT
250
V
0.5
V
1.0
V
10
μA
10
μA
50
50
10
30
MHz
isc Website：www.iscsemi.cn
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