BSS192 Ver la hoja de datos (PDF) - Siemens AG

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BSS192

SIPMOS ® Small-Signal Transistor

Siemens AG 

BSS 192

Power dissipation

Ptot = ƒ(TA)

1.2

W

1.0

Ptot

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

0 20 40 60 80 100 120 °C 160

TA

Safe operating area ID=f(VDS)

parameter : D = 0.01, TC=25°C

Drain current

ID = ƒ(TA)

parameter: VGS ≥ -10 V

-0.16

A

ID

-0.12

-0.10

-0.08

-0.06

-0.04

-0.02

0.00

0

20 40 60 80 100 120 °C 160

TA

Drain-source breakdown voltage

V(BR)DSS = ƒ(Tj)

Semiconductor Group

-285

V

-275

V(BR)DS-S270

-265

-260

-255

-250

-245

-240

-235

-230

-225

-220

-215

-60

-20

20

60

100 °C 160

Tj

5

18/02/1997

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