SI9410DY Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
fabricante
SI9410DY Datasheet PDF : 13 Pages
| |||
Si9410DY
N-channel enhancement mode field-effect transistor
M3D315
Rev. 02 — 05 July 2001
Product data
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
Si9410DY in SOT96-1 (SO8).
2. Features
s Low on-state resistance
s Fast switching
s TrenchMOS™ technology.
3. Applications
s DC to DC convertors
s DC motor control
s Lithium-ion battery applications
c
c
s Notebook PC
s Portable equipment applications.
4. Pinning information
Table 1: Pinning - SOT96-1, simplified outline and symbol
Pin
Description
Simplified outline
1
n/c
2,3
source (s)
8
5
4
gate (g)
5,6,7,8
drain (d)
1
Top view
4
MBK187
SOT96-1 (SO8)
Symbol
d
g
MBB076
s
1. TrenchMOS is a trademark of Royal Philips Electronics.
Share Link: 