BTS131 Ver la hoja de datos (PDF) - Siemens AG

Número de pieza

componentes Descripción

fabricante

BTS131

N-channel TEMPFET

Siemens AG 

Continuous drain current ID = f (TC)

Parameter: VGS ≥ 4.5 V

BTS 131

Forward characteristics of reverse diode

IF = f (VSD)

Parameter: Tj, tp = 80 µs (spread)

Typ. gate-source leakage current

IGSS = f (TC)

Parameter: VGS = 10 V, VDS = 0

Typ. capacitances C = f (VDS)

Parameter: VGS = 0, f = 1 MHz

Semiconductor Group

7

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