BTS131 Ver la hoja de datos (PDF) - Siemens AG
Número de pieza
componentes Descripción
fabricante
BTS131 Datasheet PDF : 9 Pages
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Drain-source on-state resistance
RDS(on) = f (Tj)
Parameter: ID = 12 A, VGS = 4.5 V
BTS 131
Gate threshold voltage VGS(th) = f (Tj)
Parameter: VDS = VGS, ID = 1 mA (spread)
Typ. transfer characteristic
ID = f (VGS)
Parameter: tp = 80 µs, VDS = 25 V
Typ. transconductance gfs = f (ID)
Parameter: tp = 80 µs, VDS = 25 V
Semiconductor Group
6
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