BC807(2001) Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

fabricante

BC807
(Rev.:2001)

PNP Silicon AF Transistors

Infineon Technologies 

BC807, BC808

Base-emitter saturation voltage

IC = f(VBEsat), hFE = 10

Collector-emitter saturation voltage

IC = f (VCEsat), hFE = 10

10 3

Ι C mA

10 2

5

150 ˚C

25 ˚C

-50 ˚C

EHP00214

10 3

Ι C mA

10 2

5

150 ˚C

25 ˚C

-50 ˚C

EHP00215

10 1

10 1

5

5

10 0

10 0

5

5

10 -1

0

1.0

2.0

DC current gain hFE = f(IC)

VCE = 1V

3.0 V 4.0

V BEsat

10 -1

0

0.2

0.4

0.6 V 0.8

V CEsat

10 3

h FE 5 100 ˚C

25 ˚C

-50 ˚C

10 2

5

EHP00216

10 1

5

10 0

10 -1

10 0

10 1

102 mA 103

ΙC

5

Nov-29-2001

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