BD900 Ver la hoja de datos (PDF) - Comset Semiconductors

Número de pieza

componentes Descripción

fabricante

BD900

SILICON DARLINGTON POWER TRANSISTORS

Comset Semiconductors 

SEMICONDUCTORS

BD896 – BD898 – BD900 – BD902

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

VBE(on)

Base-Emitter Voltage

(*)

IC= -3 A, VCE= -3 V

hFE

DC Current Gain (*)

VCE= -3.0 V

IC= -3 A

VECF

C-E Diode Forward

Voltage

IE= -8 A

BD896

BD898

BD900

BD902

BD896

BD898

BD900

BD902

BD896

BD898

BD900

BD902

Min Typ Max Unit

-

- -2.5 V

750 -

-

-

-

- -3.5 V

SWITCHING TIMES

Symbol

Ratings

ton

turn-on time

toff

turn-off time

Test Condition(s)

IC= -3 A, VBE(off) = 3.5 V

IBon = -IBoff = -12 mA, RL = 10 Ω

(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%

Min Typ Max Unit

-

1

-

µs

-

5

-

THERMAL CHARACTERISTICS

Symbol

Ratings

RthJ-C

RthJ-A

Thermal Resistance Junction To Case

Thermal Resistance Junction To Free Air

Value

1.79

62.5

Unit

°C/W

°C/W

25/09/2012

COMSET SEMICONDUCTORS

3|4

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