S593TRW Ver la hoja de datos (PDF) - Vishay Semiconductors

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fabricante

S593TRW

MOSMIC® for TV-Tuner Prestage with 5 V Supply Voltage

Vishay Semiconductors 

S593T/S593TR/S593TRW

Vishay Semiconductors

Parts Table

Part

S593T

S593TR

S593TRW

593

93R

W93

Marking

SOT-143

SOT-143R

SOT-343R

Package

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Drain - source voltage

Drain current

Gate 1/Gate 2 - source peak

current

Gate 1/Gate 2 - source voltage

Total power dissipation

Channel temperature

Tamb ≤ 60 °C

Storage temperature range

Symbol

Value

Unit

VDS

8

V

ID

30

mA

± IG1/G2SM

10

mA

± VG1/G2SM

6

V

Ptot

200

mW

TCh

150

°C

Tstg

- 55 to + 150

°C

Maximum Thermal Resistance

Parameter

Test condition

Symbol

Value

Unit

Channel ambient

1)

RthChA

450

K/W

1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 μm Cu

Electrical DC Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Gate 1 - source breakdown

± IG1S = 10 mA, VG2S = VDS = 0 ± V(BR)G1SS

7

voltage

10

V

Gate 2 - source breakdown

± IG2S = 10 mA, VG1S = VDS = 0 ± V(BR)G2SS

7

voltage

10

V

Gate 1 - source leakage current + VG1S = 5 V, VG2S = VDS = 0

+ IG1SS

50

μA

- VG1S = 5 V, VG2S = VDS = 0

- IG1SS

100

μA

Gate 2 - source leakage current ± VG2S = 5 V, VG1S = VDS = 0

± IG2SS

20

nA

Drain current

VDS = 5 V, VG1S = 0, VG2S = 4 V

IDSS

50

500

μA

Self-biased operating current VDS = 5 V, VG1S = nc, VG2S = 4 V

IDSP

9

13

18

mA

Gate 2 - source cut-off voltage VDS = 5 V, VG1S = nc, ID = 20 μA VG2S(OFF)

1.0

V

Caution for Gate 1 switch-off mode:

No external DC-voltage on Gate 1 in active mode!

Switch-off at Gate 1 with VG1S < 0.7 V is feasible.

Using open collector switching transistor (inside of PLL), insert 10 kΩ collector resistor.

www.vishay.com

2

Document Number 85047

Rev. 1.6, 08-Sep-08

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