MJE1320
IC
VCE
IB
TYPICAL DYNAMIC CHARACTERISTICS
10
IC pk
VCE(pk)
7
90% VCE(pk) 90% IC(pk)
5
tsv
trv
tfi
tti
3
tc
2
90% IB1
10% VCE(pk) 10%
IC pk 2% IC
1
VBE(off) = 1 V
2V
3V
TJ = 100°C
IC/IB1 = 2
0.7
TIME
Figure 7. Inductive Switching Measurements
0.5
0.3
0.5 0.7 1
2
3
56
IC, COLLECTOR CURRENT (AMPS)
Figure 8. Inductive Storage Time
6
6
5
5
VBE(off) = 3 V
3
2V
3
VBE(off) = 3 V
2
1V
2
2V
1V
1
1
0.7
0.7
0.5
0.5
0.3
0.3
0.5 0.7 1
2
3
IC, COLLECTOR CURRENT (AMPS)
Figure 9. Inductive Crossover Time
56
0.3
0.3
0.5 0.7 1
2
3
IC, COLLECTOR CURRENT (AMPS)
Figure 10. Inductive Fall Time
56
td and tr
Table 1. Resistive Load Switching
ts and tf
+ Vdc ≈ 11 Vdc
H.P. 214
OR EQUIV.
P.G.
*IB
RB = 22 Ω
50
*IC
T.U.T.
RL
VCC
0V
20 100
≈ – 35 V
H.P. 214
OR EQUIV.
+
10 µF
0.02 µF
2N6191
RB1
A
P.G.
0.02 µF
RB2
50
2N5337
500
1 µF 100
Vin
0V
≈ 11 V
tr ≤ 15 ns
*Tektronix AM503
*P6302 or Equivalent
VCC = 250 Vdc
RL = 250 Ω
IC = 1 Adc
IB = 0.5 Adc
0V
A
50
+V
–5 V
*IB
–V
T.U.T.
*IC
RL
VCC
VCC = 250 Vdc
RL = 250 Ω
IC = 1 Adc
IB1 = 0.5 Adc
IB2 = 0.5 Adc
For VBE(off) = 5 V
RB1 = 22 Ω
RB2 = 10 Ω
RB2 = 0 Ω
Note: Adjust – V to obtain desired VBE(off) at Point A.
4
Motorola Bipolar Power Transistor Device Data