FPN430 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
fabricante
FPN430 Datasheet PDF : 4 Pages
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Typical Characteristics
PNP Low Saturation Transistor
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
1.6
β = 10
1.4
1.2
1
- 40 °C
0.8
0.6
25 °C
125 °C
0.4
0.2
0.001
0.01
0.1
1
10
I C - COLLECTOR CURRENT (A)
Base-Emitter On Voltage vs
Collector Current
1.6
Vce = 2.0V
1.4
1.2
1
- 40 °C
0.8
0.6
25 °C
0.4
125 °C
0.2
0.0001 0.001
0.01
0.1
1
10
I C - COLLECTOR CURRENT (A)
Collector-Emitter Saturation
Voltage vs Collector Current
1.2
β = 10
1
125°C
- 40°C
0.8
0.6
25°C
0.4
0.2
0
0.01
0.1
1
10
I C - COLLECTOR CURRENT (A)
Input/Output Capacitance vs
Reverse Bias Voltage
120
f V=ce1=.02M.0HVz
100
C ibo
80
60
40
Cobo
20
0
0.1
0.5 1
10 20 50 100
V CE - COLLECTOR VOLTAGE (V)
Current Gain vs Collector Current
600
Vce = 2.0V
500
400
125°C
300
25°C
200
- 40°C
100
0
0.0001 0.001
0.01
0.1
1
10
I C - COLLECTOR CURRENT (A)
Power Dissipation vs
Ambient Temperature
1
TO-226
0.75
0.5
0.25
0
0
25
50
75 100 125 150
TEMPE RATURE (°C)
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