BC635 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

fabricante

BC635

NPN Silicon AF Transistors

Infineon Technologies 

BC 635

… BC 639

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC characteristics

Collector-emitter breakdown voltage

IC = 10 mA

BC 635

BC 637

BC 639

Collector-base breakdown voltage

IC = 100 µA

BC 635

BC 637

BC 639

Emitter-base breakdown voltage

IE = 10 µA

Collector cutoff current

VCB = 30 V

VCB = 30 V, TA = 150 ˚C

Emitter cutoff current

VEB = 4 V

DC current gain

IC = 5 mA; VCE = 2 V

IC = 150 mA; VCE = 2 V1)

IC = 500 mA; VCE = 2 V1)

Collector-emitter saturation voltage1)

IC = 500 mA; IB = 50 mA

Base-emitter voltage1)

IC = 500 mA; VCE = 2 V

AC characteristics

Transition frequency

IC = 50 mA, VCE = 10 V, f = 20 MHz

Symbol

Values

Unit

min. typ. max.

V(BR)CE0

45

–

60

–

80

–

V(BR)CB0

45

–

60

–

100 –

V(BR)EB0 5

–

ICB0

–

–

–

–

IEB0

–

–

hFE

25

–

40

–

25

–

VCEsat

–

–

VBE)

–

–

V

–

–

–

–

–

–

–

100 nA

20

µA

100 nA

–

–

250

–

500 mV

1

V

fT

–

100 –

MHz

1) Pulse test: t ≤ 300 µs, D ≤ 2 %.

Semiconductor Group

3

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